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參數(shù)資料
| 型號： | WED3DL3216V8BC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA119 |
| 封裝： | 17 X 23 MM, MO-163, BGA-119 |
| 文件頁數(shù)： | 22/27頁 |
| 文件大小： | 989K |
| 代理商： | WED3DL3216V8BC |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WED3DL3216V
November, 2005
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
CAPACITANCE
(TA = 25°C, f = 1MHZ, VCC = 3.3V)
Parameter
Symbol
Max
Unit
Input Capacitance
CI1
4pF
Input/Output Capacitance (DQ)
COUT
5pF
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
VCC = +3.3V ±0.3V; -55°C TA +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-5
5
μA
Input Leakage Address Current: Any input 0V VIN VCC (All other pins not under test = 0V)
II
-20
20
μA
Output Leakage Current: I/Os are disabled; 0V VOUT VCC
IOZ
-5
5
μA
Output Levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOH
2.4
–
V
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13)
VCC = +3.3V ±0.3V; -55°C
TA
+125°C
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
ICC1
250
mA
Standby Current: Active Mode; CKE = HIGH; CS = HIGH;
All banks active after tRCD met; No accesses in progress (3, 12, 19)
ICC3
130
mA
Operating Current: Burst Mode; Continuous burst;
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
ICC4
270
mA
Self Refresh Current: CKE 0.2V (commercial and industrial temperature only) (27)
ICC7
5mA
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