- 您現(xiàn)在的位置：買賣IC網 > PDF目錄203625 > W25Q80VZPIG (WINBOND ELECTRONICS CORP) 1M X 8 SPI BUS SERIAL EEPROM, DSO8 PDF資料下載
參數(shù)資料
| 型號： | W25Q80VZPIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| 封裝： | 6 X 5 MM, GREEN, WSON-8 |
| 文件頁數(shù)： | 31/61頁 |
| 文件大?。?/td> | 1794K |
| 代理商： | W25Q80VZPIG |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當前第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁
W25Q80, W25Q16, W25Q32
Publication Release Date: September 26, 2007
- 37 -
Preliminary - Revision B
10.2.19 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 19.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY bit.
The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any
page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 19. Chip Erase Instruction Sequence Diagram
相關PDF資料 |
PDF描述 |
|---|---|
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
| W25X80AVDAIZ | 1M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X80ALSSIG | 1M X 8 FLASH 2.7V PROM, PDSO8 |
| W25X40ALDAIZ | 512K X 8 FLASH 2.7V PROM, PDIP8 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W25S243A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243A-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243AD-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243AF-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25X10 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:The W25X10 (1M-bit), W25X20 (2M-bit), W25X40 (4M-bit) and W25X80 (8M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. |
發(fā)布緊急采購，3分鐘左右您將得到回復。