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參數(shù)資料
| 型號(hào)： | W25Q80VZPIG |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| 封裝： | 6 X 5 MM, GREEN, WSON-8 |
| 文件頁(yè)數(shù)： | 28/61頁(yè) |
| 文件大?。?/td> | 1794K |
| 代理商： | W25Q80VZPIG |
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W25Q80, W25Q16, W25Q32
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10.2.16 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 16.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status
of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1,
and BP0) bits (see Status Register Memory Protection table).
Figure 16. Sector Erase Instruction Sequence Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W25X16AVDAIZ | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X40AVSSIG | 512K X 8 FLASH 2.7V PROM, PDSO8 |
| W25X80AVDAIZ | 1M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X80ALSSIG | 1M X 8 FLASH 2.7V PROM, PDSO8 |
| W25X40ALDAIZ | 512K X 8 FLASH 2.7V PROM, PDIP8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25S243A | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243A-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243AD-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25S243AF-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM |
| W25X10 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:The W25X10 (1M-bit), W25X20 (2M-bit), W25X40 (4M-bit) and W25X80 (8M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. |
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