參數(shù)資料
型號(hào): W25Q80VZPIG
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 1M X 8 SPI BUS SERIAL EEPROM, DSO8
封裝: 6 X 5 MM, GREEN, WSON-8
文件頁數(shù): 17/61頁
文件大?。?/td> 1794K
代理商: W25Q80VZPIG
W25Q80, W25Q16, W25Q32
- 24 -
10.2.8 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by
a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of
the CLK pin. After the address is received, the data byte of the addressed memory location will be
shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is
automatically incremented to the next higher address after each byte of data is shifted out allowing for a
continuous stream of data. This means that the entire memory can be accessed with a single instruction
as long as the clock continues. The instruction is completed by driving /CS high. The Read Data
instruction sequence is shown in figure 8. If a Read Data instruction is issued while an Erase, Program
or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on the
current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR (see AC
Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
相關(guān)PDF資料
PDF描述
W25X16AVDAIZ 2M X 8 FLASH 2.7V PROM, PDIP8
W25X40AVSSIG 512K X 8 FLASH 2.7V PROM, PDSO8
W25X80AVDAIZ 1M X 8 FLASH 2.7V PROM, PDIP8
W25X80ALSSIG 1M X 8 FLASH 2.7V PROM, PDSO8
W25X40ALDAIZ 512K X 8 FLASH 2.7V PROM, PDIP8
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