- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385002 > TMS45160P (Texas Instruments, Inc.) 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES PDF資料下載
參數(shù)資料
| 型號： | TMS45160P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 262144字由16位高速動態(tài)隨機存取記憶體 |
| 文件頁數(shù)： | 8/23頁 |
| 文件大?。?/td> | 353K |
| 代理商： | TMS45160P |
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
switching characteristics over recommended ranges of supply voltage and operating free-air
temperature
PARAMETER
’45160-60
’45160P-60
’45160-70
’45160P-70
’45160-80
’45160P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tCAC
tAA
tRAC
tOEA
tCPA
tCLZ
tOFF
tOEZ
NOTE 4: tOFF and tOEZ are specified when the output is no longer driven.
Access time from xCAS low
15
20
20
ns
Access time from column address
30
35
40
ns
Access time from RAS low
60
70
80
ns
Access time from OE low
15
20
20
ns
Access time from column precharge
35
40
45
ns
Delay time, xCAS low to output in low impedance
0
0
0
ns
Output disable time after xCAS high (see Note 4)
0
15
0
20
0
20
ns
Output disable time after OE high (see Note 4)
0
15
0
20
0
20
ns
timing requirements over recommended ranges of supply voltage and operating free-air
temperature (see Note 5)
’45160-60
’45160P-60
’45160-70
’45160P-70
’45160-80
’45160P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
tRC
tWC
tRWC
tPC
tPRWC
tRASP
tRAS
tCAS
tCP
tRP
tWP
tASC
tASR
tDS
tRCS
tCWL
tRWL
tWCS
NOTES:
Cycle time, read (see Note 6)
110
130
150
ns
Cycle time, write
110
130
150
ns
Cycle time, read-write/read-modify-write
155
185
205
ns
Cycle time, page-mode read or write (see Note 7)
40
45
50
ns
Cycle time, page-mode read-modify-write
85
90
105
ns
Pulse duration, RAS low, page mode (see Note 8)
60
100 000
70
100 000
80
100 000
ns
Pulse duration, RAS low, nonpage mode (see Note 8)
60
10 000
70
10 000
80
10 000
ns
Pulse duration, xCAS low (see Note 9)
15
10 000
20
10 000
20
10 000
ns
Pulse duration, xCAS high
10
10
10
ns
Pulse duration, RAS high (precharge)
40
50
60
ns
Pulse duration, write
15
15
15
ns
Setup time, column address before xCAS low
0
0
0
ns
Setup time, row address before RAS low
0
0
0
ns
Setup time, data before W low (see Note 10)
0
0
0
ns
Setup time, read before xCAS low
0
0
0
ns
Setup time, W low before xCAS high
15
20
20
ns
Setup time, W low before RAS high
15
20
20
ns
Setup time, W low before xCAS low (see Note 11)
0
0
0
ns
5. Timing measurements are referenced to VIL max and VIH min.
6. All cycle times assume tT = 5 ns.
7. To assure tPC min, tASC should be
≥
tCP.
8. In a read-modify-write cycle, tRWD and tRWL must be observed.
9. In a read-modify-write cycle, tCWD and tCWL must be observed.
10. Referenced to the later of xCAS or W in write operations
11. Early-write operation only
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS46100 | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46100P | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44100P | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46400 | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44400-80DJ | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS45160S-10DGE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-10DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-70DGE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-70DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-80DGE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。