參數(shù)資料
型號(hào)： TMS45160P
廠商： Texas Instruments, Inc.
英文描述： 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES
中文描述： 262144字由16位高速動(dòng)態(tài)隨機(jī)存取記憶體
文件頁數(shù)： 7/23頁
文件大?。?/td> 353K
代理商： TMS45160P
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
’45160-60
’45160P-60
’45160-70
’45160P-70
’45160-80
’45160P-80
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
VOH
High-level output
voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output
voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current
(leakage)
VCC = 5.5 V,
All others = 0 V to VCC
VCC = 5.5 V,
CAS high
VI = 0 V to 6.5 V,
±
10
±
10
±
10
μ
A
IO
Output current
(leakage)
VO = 0 V to VCC,
±
10
±
10
±
10
μ
A
ICC1§
Read- or write-cycle
current
VCC = 5.5 V,
Minimum cycle
180
160
140
mA
ICC2
Standby current
VIH = 2.4 V (TTL),
After 1 memory cycle,
RAS and xCAS high
2
2
2
mA
VIH = VCC – 0.2 V (CMOS),
After 1 memory cycle,
RAS and xCAS high
’45160
1
1
1
mA
’45160P
350
350
350
μ
A
ICC3
Average refresh
current (RAS-only
refresh or CBR)
VCC = 5.5 V,
(RAS only),
xCAS high (CBR only),
RAS low after xCAS low
VCC = 5.5 V,
RAS low,
Minimum cycle,
RAS cycling,
180
160
140
mA
ICC4§
Average page current
tPC = MIN,
xCAS cycling
160
140
120
mA
ICC5
Battery-backup
operating current
(equivalent refresh
time is 64 ms);
CBR only
tRC = 125
μ
s,
VCC – 0.2 V
≤
VIH
≤
6.5 V,
0 V
≤
VIL
≤
0.2 V, W and OE = VIH,
Address and data stable
tRAS
≤
1
μ
s,
500
500
500
μ
A
ICC6
Self-refresh current
xCAS < 0.2 V,
tRAS and tCAS > 1000 ms
RAS < 0.2 V,
400
400
400
μ
A
Measured with outputs open
Measured with a maximum of one address change while RAS = VIL
§Measured with a maximum of one address change while xCAS = VIH
For TMS45160P only
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz
#
(see Note 3)
PARAMETER
MIN
MAX
UNIT
Ci(A)
Ci(OE)
Ci(RC)
Ci(W)
Co
#Capacitance measurements are made on a sample basis only.
NOTE 3: VCC = 5 V
±
0.5 V, and the bias on pins under test is 0 V.
Input capacitance, A0–A8
5
pF
Input capacitance, OE
7
pF
Input capacitance, xCAS and RAS
7
pF
Input capacitance, W
7
pF
Output capacitance
7
pF
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