參數(shù)資料
型號(hào): TMS45160P
廠商: Texas Instruments, Inc.
英文描述: 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 262144字由16位高速動(dòng)態(tài)隨機(jī)存取記憶體
文件頁(yè)數(shù): 16/23頁(yè)
文件大?。?/td> 353K
代理商: TMS45160P
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
16
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
UCAS
LCAS
A0–A8
W
DQ8–DQ15
DQ0–DQ7
OE
tRASP
tRP
tRSH
tCRP
tPC
tCSH
tRCD
tCAS
tCP
tCAL
tRAL
tCAH
tASR
tAR
tRAH
tRAD
tCWL
tWP
tWCR
tCWL
tRWL
tDHR
tDH
tDS
tOED
Column
Column
Valid In
Valid In
Valid In
Valid In
Row
See Note B
tCLCH
(see Note A)
tASC
tWCH
(see Note B)
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
NOTES: A. In order to hold the address latched by the first xCAS going low, the parameter tCLCH must be met.
B. Referenced to xCAS or W, whichever occurs last
C. xCAS order is arbitrary.
D. A read cycle or read-modify-write cycle can be mixed with the write cycles as long as the read and read-modify-write timing
specifications are not violated.
Figure 7. Enhanced-Page-Mode Write-Cycle Timing
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