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參數(shù)資料
| 型號(hào)： | TMS45160P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 262144字由16位高速動(dòng)態(tài)隨機(jī)存取記憶體 |
| 文件頁數(shù)： | 12/23頁 |
| 文件大?。?/td> | 353K |
| 代理商： | TMS45160P |
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
12
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
UCAS
LCAS
A0–A8
W
DQ0–DQ15
OE
Row
Column
Valid Data In
tWC
tRAS
tRP
tCAS
tRCD
tT
tCP
tCRP
tRSH
tRAH
tASC
tCAL
tRAL
tAR
tRAD
tCAH
tCWL
tRWL
tWP
tDH (see Note B)
tOED
tDHR
tOEH
tDS
tCLCH
(see Note A)
tWCR
tASR
tCSH
Don’t Care
Don’t Care
Don’t Care
NOTES: A. In order to hold the address latched by the first xCAS going low, the parameter tCLCH must be met.
B. Later of xCAS or W in write operations
C. xCAS order is arbitrary.
Figure 3. Write-Cycle Timing
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