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參數(shù)資料
| 型號： | TMS45160P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 262144字由16位高速動態(tài)隨機存取記憶體 |
| 文件頁數(shù)： | 10/23頁 |
| 文件大?。?/td> | 353K |
| 代理商： | TMS45160P |
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
1.31 V
RL = 218
Output Under Test
CL = 100 pF
(see Note A)
(a) LOAD CIRCUIT
VCC = 5 V
R1 = 828
Output Under Test
(b) ALTERNATE LOAD CIRCUIT
R2 = 295
CL = 100 pF
(see Note A)
NOTE A: CL includes probe and fixture capacitance.
Figure 1. Load Circuits for Timing Parameters
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