- 您現在的位置：買賣IC網 > PDF目錄385002 > TMS45160P (Texas Instruments, Inc.) 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES PDF資料下載
參數資料
| 型號： | TMS45160P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 262144字由16位高速動態(tài)隨機存取記憶體 |
| 文件頁數： | 11/23頁 |
| 文件大?。?/td> | 353K |
| 代理商： | TMS45160P |
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
11
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
UCAS
LCAS
A0–A8
W
DQ0–DQ15
OE
Row
Column
tCAS
tRC
tRAS
tT
tRCD
tRP
tCP
tRSH
tCSH
tRAD
tRAH
tASC
tRAL
tAR
tCAH
tRRH
tCAC
tAA
tRAC
tOEA
tROH
tOEZ
tRCS
tCAL
tASR
tRCH
tOFF
Valid Data Out
tCLZ
tCLCH
(see Note A)
See Note B
Don’t Care
Don’t Care
Don’t Care
tCRP
NOTES: A. In order to hold the address latched by the first xCAS going low, the parameter tCLCH must be met.
B. Output can go from the high-impedance state to an invalid-data state prior to the specified access time.
C. tCAC is measured from xCAS to its corresponding DQx.
D. xCAS order is arbitrary.
Figure 2. Read-Cycle Timing
相關PDF資料 |
PDF描述 |
|---|---|
| TMS46100 | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46100P | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44100P | 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS46400 | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
| TMS44400-80DJ | 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TMS45160S-10DGE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-10DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-70DGE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-70DZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| TMS45160S-80DGE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。