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參數(shù)資料
| 型號(hào)： | TMS45160P |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES |
| 中文描述： | 262144字由16位高速動(dòng)態(tài)隨機(jī)存取記憶體 |
| 文件頁數(shù)： | 4/23頁 |
| 文件大小： | 353K |
| 代理商： | TMS45160P |
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
power up
To achieve proper device operation, an initial pause of 200
μ
s followed by a minimum of eight RAS cycles is
required after power up to the full V
CC
level.These eight initialization cycles must include at least one refresh
(RAS-only or xCBR) cycle.
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