參數(shù)資料
型號(hào): TMS45160P
廠商: Texas Instruments, Inc.
英文描述: 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES
中文描述: 262144字由16位高速動(dòng)態(tài)隨機(jī)存取記憶體
文件頁(yè)數(shù): 14/23頁(yè)
文件大?。?/td> 353K
代理商: TMS45160P
TMS45160, TMS45160P
262144-WORD BY 16-BIT HIGH-SPEED
DYNAMIC RANDOM-ACCESS MEMORIES
SMHS160D – AUGUST 1992 – REVISED JUNE 1995
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
RAS
UCAS
LCAS
A0–A8
W
DQ8–DQ15
OE
tRWC
Don’t Care
Column
Row
Valid Out
tRAS
tRP
tRCD
tT
tCP
tRAD
tRAH
tCAH
tAWD
tCWD
tCWL
tRCS
tWP
tRWD
tCAC
tRAC
tOEA
tOED
Valid In
tAA
DQ0–DQ7
Valid Out
tDH
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
tASR
tCAS
tRWL
tCSH
tAR
tRSH
tASC
tCLCH
(see Note A)
tOEZ
Don’t Care
tDS
tCRP
See Note B
See Note B
NOTES: A. In order to hold the address latched by the first xCAS going low, the parameter tCLCH must be met.
B. Output can go from the high-impedance state to an invalid-data state prior to the specified access time.
C. xCAS order is arbitrary.
Figure 5. Read-Modify-Write-Cycle Timing
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