參數(shù)資料
型號： S8S3122X16
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256K x 16 SDRAM
中文描述： 256K × 16內(nèi)存
文件頁數(shù)： 7/44頁
文件大小： 1163K
代理商： S8S3122X16
S8S3122X16
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
CMOS SDRAM
Ver 0.0 Sep. '01
1. Unless otherwise notes, Input level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
) in LVTTL.
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 16ms. Addresses are changed only one time during tcc(min).
Note :
Parameter
Sym-
bol
Test Condition
CAS
Latency
Version
Unit
Note
-TCR2 -TCR1
Operating Current
(One Bank Active)
I
CC1
Burst Length =1
t
RC
≥
t
RC
(min)
I
o
= 0 mA
3
100
90
mA
2
2
100
90
Precharge Standby Cur-
rent in power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 15ns
2
mA
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
2
Precharge Standby Current
in non power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
15
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
5
Active Standby Current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 15ns
3
mA
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
3
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
25
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
15
mA
Operating Current
(Burst Mode)
I
CC4
I
o
= 0 mA
Page Burst 2Banks Activated
t
CCD
= 2CLKs
3
100
100
mA
2
2
95
95
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
3
100
90
mA
3
2
100
90
Self Refresh Current
I
CC6
CKE
≤
0.2V
2
mA
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