參數(shù)資料
型號(hào): S8S3122X16
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256K x 16 SDRAM
中文描述: 256K × 16內(nèi)存
文件頁(yè)數(shù): 42/44頁(yè)
文件大?。?/td> 1163K
代理商: S8S3122X16
CMOS SDRAM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
S8S3122X16
Ver 0.0 Sep. '01
Self Refresh Entry & Exit Cycle
Self Refresh Entry
: Don't care
*Note 1
*Note 7
Hi-Z
Hi-Z
Self Refresh Exit
Auto Refresh
tSS
*Note 2
*Note 3
*Note 4
tRCmin
*Note 6
*Note 5
BA
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
A
8
/AP
*Note :
TO ENTER SELF REFRESH MODE
1. CS, RAS & CAS with CKE should be low at the same clcok cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don't care except for CKE.
3. The device remains in self refresh mode as long as CKE stays
"Low".
cf.) Once the device enters self refresh mode, minimum t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System colck restart and be stable before returning CKE high.
5. CS starts from high.
6. Minimum t
RC
is required after CKE going high to complete self refresh exit.
7.1K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh.
相關(guān)PDF資料
PDF描述
S8S3122X16-TCR1 256K x 16 SDRAM
S8S3122X16-TCR2 256K x 16 SDRAM
S9015 PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER)
S9015 Low Frequency, Low Noise Amplifier
S9015 PNP Silicon Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S8S3122X16-TCR1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16 SDRAM
S8S3122X16-TCR2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16 SDRAM
S-8T 制造商:ALLSTATES 功能描述:
S8T26AF 制造商:Advanced Micro Devices 功能描述:
S8T28F 制造商:Rochester Electronics LLC 功能描述:- Bulk