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參數(shù)資料
| 型號(hào)： | S8S3122X16 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16 SDRAM |
| 中文描述： | 256K × 16內(nèi)存 |
| 文件頁數(shù)： | 11/44頁 |
| 文件大小： | 1163K |
| 代理商： | S8S3122X16 |
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S8S3122X16
CMOS SDRAM
Ver 0.0 Sep. '01
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
BA
W.B.L
A
8
/AP
A
7
TM
A
6
A
5
A
4
A
3
BT
A
2
A
1
A
0
CAS Latency
Burst Length
A
8
/AP
0
0
1
1
A
7
0
1
0
1
Write Burst Length
Length
A
6
0
0
0
0
1
1
1
1
A
5
0
0
1
1
0
0
1
1
A
4
0
1
0
1
0
1
0
1
A
3
0
1
A
2
0
0
0
0
1
1
1
1
A
1
0
0
1
1
0
0
1
1
A
0
0
1
0
1
0
1
0
1
BT = 0
1
2
4
8
Reserved
Reserved
Reserved
Full Page
Test Mode
Type
Mode Register Set
Reserved
Reserved
Reserved
BA
0
1
Burst
Single Bit
Latency
Reserved
-
2
3
Reserved
Reserved
Reserved
Reserved
CAS Latency
Burst Type
BT = 1
1
2
4
8
Reserved
Reserved
Reserved
Reserved
Burst Length
Type
Sequential
Interleave
POWER UP SEQUENCE
SDRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
1. Apply power and start clock. Must maintain CKE= "H", DQM= "H" and the other pins are NOP condition at the inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
Note
: 1. If BA is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
2. RFU (Reserved for future use) should stay "0" during MRS cycle.
Full Page Length : x4 (512), x8 (256), x16 (256)
Address
Function
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S8S3122X16-TCR1 | 256K x 16 SDRAM |
| S8S3122X16-TCR2 | 256K x 16 SDRAM |
| S9015 | PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER) |
| S9015 | Low Frequency, Low Noise Amplifier |
| S9015 | PNP Silicon Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S8S3122X16-TCR1 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16 SDRAM |
| S8S3122X16-TCR2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256K x 16 SDRAM |
| S-8T | 制造商:ALLSTATES 功能描述: |
| S8T26AF | 制造商:Advanced Micro Devices 功能描述: |
| S8T28F | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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