參數(shù)資料
型號(hào)： S29GL256N10FFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù)： 92/95頁
文件大小： 3781K
代理商： S29GL256N10FFI010
92
S29GL-N
S29GL-N_00_B8 May 30, 2008
Da ta
Sh e e t
DC Characteristics table
Added VIO = VCC test condition to ICC4, ICC5, ICC6 specifications. Corrected unit of measure on ICC4 to A.
Changed maximum specifications for IACC (on ACC pin) and ICC3 to 90 mA.
Tables Memory Array Commands (x16) to Sector Protection Commands (x8), Memory Array
and Sector Protection (x8 & x16)
Re-formatted command definition tables for easier reference.
Advance Information on S9GL-P AC Characteristics
Changed speed specifications and units of measure for tREADY, tRP, tRH, and tRPD. Changed specifications on
tREADY from maximum to minimum.
21.10 Revision A9 (June 15, 2005)
Ordering Information table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced VIL lines for ICC4, ICC5, ICC6.
Connection Diagrams
Modified 56-Pin Standard TSOP. Modified 64-ball Fortified BGA.
Advance Information on S9GL-P AC Characteristics
Added second table.
21.11 Revision B0 (April 22, 2006)
Global
Changed document status to Full Production.
Ordering Information
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combinations table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit (PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory
Modified 1st bullet text.
Write Protect (WP#)
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
Word Program Command Sequence
Modified fourth paragraph.
相關(guān)PDF資料
PDF描述
S29GL256N80FAI010 MirrorBit Flash Family
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S29GL256N80FFI013 MirrorBit Flash Family
S29JL032H90TAI223 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
S29WS064N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256N10FFI012 制造商:Spansion 功能描述:Flash - NOR IC
S29GL256N10FFI020 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256
S29GL256N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:256Mb （32M x 8，16M x 16） 寫周期時(shí)間 - 字，頁:100ns 訪問時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL256N11FAI010 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256N11FAIIH2 制造商:Spansion 功能描述:S29GL256N11FAIIH2 - Trays
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