參數(shù)資料
型號： S29GL256N10FFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù)： 77/95頁
文件大小： 3781K
代理商： S29GL256N10FFI010
May 30, 2008 S29GL-N_00_B8
S29GL-N
79
Data
She e t
15.4
Alternate CE# Controlled Erase and Program Operations:
S29GL128N, S29GL256N, S29GL512N
Notes
1. Not 100% tested.
2. See AC Characteristics on page 72 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
Parameter
Speed Options
JEDEC
Std.
Description
90
100
110
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
TASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit
polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1 tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
s
Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
15
s
Effective Accelerated Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
13.5
s
Program Operation (Note 2)
Word
Typ
60
s
Accelerated Programming Operation
Word
Typ
54
s
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
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