參數(shù)資料
型號(hào)： S29GL256N10FFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FBGA-64
文件頁(yè)數(shù)： 73/95頁(yè)
文件大?。?/td> 3781K
代理商： S29GL256N10FFI010
May 30, 2008 S29GL-N_00_B8
S29GL-N
75
Data
She e t
15.3
Erase and Program Operations
Notes
1. Not 100% tested.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns, 100 ns, and 110 ns speed options are tested with VIO = VCC = 3 V. AC
specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
6. 90 ns speed option only applicable to S29GL128N and S29GL256N.
Parameter
Speed Options
JEDEC
Std.
Description
90
100
110
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1 tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
s
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Word
Typ
s
15
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Word
Typ
s
13.5
Program Operation (Note 2)
Word
Typ
s
60
Accelerated Programming Operation
Word
Typ
s
54
tWHWH2 tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
s
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
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