參數(shù)資料
型號： S29GL256N10FFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： MirrorBit Flash Family
中文描述： 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù)： 41/95頁
文件大?。?/td> 3781K
代理商： S29GL256N10FFI010
46
S29GL-N
S29GL-N_00_B8 May 30, 2008
Da ta
Sh e e t
Table 8.2 System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0007h
Typical timeout per single byte/word write 2
N s
20h
40h
0007h
Typical timeout for Min. size buffer write 2N
s (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N ms
22h
44h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2
N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 8.3 Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
001Ah
0019h
0018h
Device Size = 2
N byte
1A = 512 Mb, 19 = 256 Mb, 18 = 128 Mb
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h =
boot device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
62h
64h
66h
68h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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