參數(shù)資料
型號(hào): S29GL256N10FFI010
廠商: SPANSION LLC
元件分類: PROM
英文描述: MirrorBit Flash Family
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù): 63/95頁
文件大?。?/td> 3781K
代理商: S29GL256N10FFI010
66
S29GL-N
S29GL-N_00_B8 May 30, 2008
Da ta
Sh e e t
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
algorithm is complete.
Table 10.1 on page 68 shows the outputs for Toggle Bit I on DQ6. Figure 10.2 shows the toggle bit algorithm.
Figure 15.8 on page 78 shows the toggle bit timing diagrams. Figure 15.9 on page 78 shows the differences
between DQ2 and DQ6 in graphical form. See also DQ2: Toggle Bit II on page 67.
Figure 10.2 Toggle Bit Algorithm
Note
The system should recheck the toggle bit even if DQ5 = 1 because the toggle bit may stop toggling as DQ5 changes to 1. See the
subsections on DQ6 and DQ2 for more information.
START
No
Yes
DQ5 = 1?
No
Yes
Toggle Bit
= Toggle?
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle?
Read DQ7–DQ0
Twice
Read DQ7–DQ0
相關(guān)PDF資料
PDF描述
S29GL256N80FAI010 MirrorBit Flash Family
S29GL256N80FFI010 MirrorBit Flash Family
S29GL256N80FFI013 MirrorBit Flash Family
S29JL032H90TAI223 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
S29WS064N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256N10FFI012 制造商:Spansion 功能描述:Flash - NOR IC
S29GL256N10FFI020 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 256MB SMD 29LV256
S29GL256N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:256Mb (32M x 8,16M x 16) 寫周期時(shí)間 - 字,頁:100ns 訪問時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TA) 安裝類型:表面貼裝 封裝/外殼:56-TFSOP(0.724",18.40mm 寬) 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL256N11FAI010 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256N11FAIIH2 制造商:Spansion 功能描述:S29GL256N11FAIIH2 - Trays