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參數資料
| 型號： | S25L004A0LMAI003 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 4M X 1 FLASH 3V PROM, PDSO8 |
| 封裝： | 0.208 INCH, PLASTIC, SOP-8 |
| 文件頁數： | 21/39頁 |
| 文件大小： | 945K |
| 代理商： | S25L004A0LMAI003 |
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S25FL Family (Serial Peripheral Interface) S25FL004A
S25FL004A_00_A1 March 28, 2005
Ad va n c e
In f o rm a t i o n
Figure 15. Deep Power Down (DP) Instruction Sequence
Release from Deep Power Down (RES)
The Release from Deep Power Down (RES) instruction provides the only way to
exit the Deep Power Down mode. Once the device enters the Deep Power Down
mode, all instructions are ignored except the Release from Deep Power Down
(RES) instruction. Executing this instruction takes the device out of Deep Power
Down mode.
The Release from Deep Power Down (RES) instruction is entered by driving Chip
Select (CS#) Low, followed by the instruction code on Serial Data Input (SI). Chip
Select (CS#) must be driven Low for the entire sequence duration.
The instruction sequence is shown in Figure 16, on page 27.
Driving Chip Select (CS#) High after the 8-bit instruction byte is received by the
device, but before the whole of the 8-bit Electronic Signature is transmitted for
the first time, still insures that the device is placed into Standby mode. If the de-
vice was previously in the Deep Power Down mode, the transition to the Stand-
by Power mode is delayed by tRES, and Chip Select (CS#) must remain High for
Power mode, the device waits to be selected, so that it can receive, decode, and
execute instructions.
CS#
SCK
SI
Standby Mode
Deep Power Down Mode
Instruction
0
1
23
4
5
6
7
tDP
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