參數(shù)資料
型號(hào): S25L004A0LMAI003
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 4M X 1 FLASH 3V PROM, PDSO8
封裝: 0.208 INCH, PLASTIC, SOP-8
文件頁(yè)數(shù): 8/39頁(yè)
文件大?。?/td> 945K
代理商: S25L004A0LMAI003
14
S25FL Family (Serial Peripheral Interface) S25FL004A
S25FL004A_00_A1 March 28, 2005
Ad va n c e
In f o rm a t i o n
Instructions
All instructions, addresses, and data are shifted in and out of the device, starting
with the most significant bit. Serial Data Input (SI) is sampled on the first rising
edge of Serial Clock (SCK) after Chip Select (CS#) is driven Low. Then, the one-
byte instruction code must be shifted in to the device, most significant bit first,
on Serial Data Input (SI), each bit being latched on the rising edges of Serial
Clock (SCK). The instruction set is listed in Table 4, on page 15.
Every instruction sequence starts with a one-byte instruction code. Depending on
the instruction, this might be followed by address bytes, or by data bytes, or by
both or none. Chip Select (CS#) must be driven High after the last bit of the in-
struction sequence is shifted in.
In the case of a Read Data Bytes (READ), Read Status Register (RDSR), Read
Data Bytes at higher speed (FAST_READ) and Read Identification (RDID) instruc-
tions, the shifted-in instruction sequence is followed by a data-out sequence.
Chip Select (CS#) can be driven High after any bit of the data-out sequence is
being shifted out to terminate the transaction.
In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write
Status Register (WRSR), Write Enable (WREN), or Write Disable (WRDI) instruc-
tion, Chip Select (CS#) must be driven High exactly at a byte boundary,
otherwise the instruction is rejected, and is not executed. That is, Chip Select
(CS#) must driven High when the number of clock pulses after Chip Select (CS#)
being driven Low is an exact multiple of eight.
All attempts to access the memory array during a Write Status Register cycle,
Program cycle or Erase cycle are ignored, and the internal Write Status Register
cycle, Program cycle or Erase cycle continues unaffected
相關(guān)PDF資料
PDF描述
S25VB80 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
S268P PIN PHOTO DIODE
S29GL01GP12FACR13 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
S29GL128P10TFI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S25M 功能描述:整流器 1000V 25A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S25M50M3 制造商:SR COMPONENTS 功能描述: 制造商:SR Components Inc 功能描述:
S-25M9F-NM-6' 制造商:Pan Pacific 功能描述:
S-25MD8-10'SI 制造商:Pan Pacific 功能描述:
S-25MF-100' 制造商:Pan Pacific 功能描述: