參數(shù)資料
型號： NT5TU64M16DG-3C
廠商： NANYA TECHNOLOGY CORP
元件分類： DRAM
英文描述： 64M X 16 DDR DRAM, 0.45 ns, PBGA84
封裝： GREEN, BGA-84
文件頁數(shù)： 36/85頁
文件大小： 2622K
代理商： NT5TU64M16DG-3C
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
41
REV 1.0
06 / 2010
Auto-Precharge Operation
Before a new row in an active bank can be opened, the active bank must be precharged using either the Pre-charge
Command or the Auto-Precharge function. When a Read or a Write Command is given to the DDR2 SDRAM, the
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at the
earliest possible moment during the burst read or write cycle. If A10 is low when the Read or Write Command is issued,
then normal Read or Write burst operation is executed and the bank remains active at the completion of the burst sequence.
If A10 is high when the Read or Write Command is issued, then the Auto-Precharge function is enabled. During
Auto-Precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge
internally on the rising edge which is
Latency (CL) clock cycles before the end of the read burst. Auto-Precharge is
also implemented for Write Commands. The precharge operation engaged by the Auto-Precharge command will not begin
until the last data of the write burst sequence is properly stored in the memory array. This feature allows the precharge
operation to be partially or completely hidden during burst read cycles (dependent upon
Latency) thus improving
system performance for random data access. The RAS lockout circuit internally delays the precharge operation until the
array restore operation has been completed so that the Auto-Precharge command may be issued with any read or write
command.
Burst Read with Auto-Precharge
If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The DDR2 SDRAM
starts an Auto-Precharge operation on the rising edge which is (AL + BL/2) cycles later from the Read with AP command if
tRAS(min) and tRTP are satisfied. If tRAS(min) is not satisfied at the edge, the start point of Auto-Precharge operation will be
delayed until tRAS(min) is satisfied.
If tRTP(min) is not satisfied at the edge, the start point of Auto-Precharge operation will
be delayed until tRTP(min) is satisfied.
In case the internal precharge is pushed out by tRTP, tRP starts at the point where the internal precharge happens (not at the
next rising clock edge after this event). So for BL = 4 the minimum time from Read with Auto-Precharge to the next Activate
command becomes AL + tRTP + tRP. For BL = 8 the time from Read with Auto-Precharge to the next Activate command is AL
+ 2 + tRTP + tRP. Note that both parameters tRTP and tRP have to be rounded up to the next integer value. In any event internal
precharge does not start earlier than two clocks after the last 4-bit prefetch.
A new bank active (command) may be issued to the same bank if the following two conditions are satisfied simultaneously:
(1) The
precharge time (tRP) has been satisfied from the clock at which the Auto-Precharge begins.
(2) The
cycle time (tRC) from the previous bank activation has been satisfied.
相關(guān)PDF資料
PDF描述
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
NTA2425-10
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NT5TU64M16GG-AC 制造商:Nanya Technology Corporation 功能描述:DRAM
NT5TU64M16GG-ACI 制造商:Nanya Technology Corporation 功能描述:DRAM
NT5TU64M16HG-AC 制造商:Nanya Technology Corporation 功能描述:MEMORY IC
NT5TU64M16HG-BE 制造商:Nanya Technology Corporation 功能描述:MEMORY IC
NT6 功能描述:烙鐵 Weller Chisel Tip For WMP Solder Penc RoHS:否 制造商:Weller 產(chǎn)品:Soldering Stations 類型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大溫度:+ 850 F 電纜類型:US Cord Included
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