參數(shù)資料
型號: NT5TU64M16DG-3C
廠商: NANYA TECHNOLOGY CORP
元件分類: DRAM
英文描述: 64M X 16 DDR DRAM, 0.45 ns, PBGA84
封裝: GREEN, BGA-84
文件頁數(shù): 25/85頁
文件大?。?/td> 2622K
代理商: NT5TU64M16DG-3C
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
31
REV 1.0
06 / 2010
Burst Read Operation: RL = 3 (AL = 0, CL = 3, BL = 8)
CMD
NOP
DQ's
NOP
READ A
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 3
CL = 3
NOP
<= tDQSCK
BRead303
DQS,
DQS
Dout A4
Dout A5
Dout A6
Dout A7
CK, CK
Burst Read followed by Burst Write : RL = 5, WL = (RL-1) = 4, BL = 4
The minimum time from the burst read command to the burst write command is defined by a read-to-write-turn-around
time(tRTW), which is 4 clocks in case of BL=4 operation, 6 clocks in case of BL=8 operation.
Seamless Burst Read Operation: RL = 5, AL = 2, CL = 3, BL = 4
NOP
READ A
Post CAS
READ B
Post CAS
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
Dout B0
Dout B1
Dout B2
Dout B3
RL = 5
AL = 2
CL = 3
SBR523
CMD
DQ
DQS,
DQS
CK, CK
NOP
Posted CAS
WRITE A
NOP
READ A
Posted CAS
T0
T1
Dout A0
Dout A1
Dout A2
Dout A3
RL = 5
NOP
CMD
DQ
BRBW514
Tn-1
Tn
Tn+1
Tn+2
Tn+3
Tn+4
Tn+5
Din A0
Din A1
Din A2
Din A3
DQS,
DQS
WL = RL - 1 = 4
tRTW(Read to Write turn around time)
CK, CK
相關(guān)PDF資料
PDF描述
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
NTA2425-10
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