參數(shù)資料
型號(hào)： NAND99R3M2AZBB5E
廠商： NUMONYX
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA107
封裝： 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
文件頁(yè)數(shù)： 30/33頁(yè)
文件大?。?/td> 724K
代理商： NAND99R3M2AZBB5E
Description
NANDxxxxMx
1
Description
The NANDxxxxMx devices (see Table 1: Device summary for the list of devices) combine
two memory devices in a multichip package:
l
256-Mbit, 512-Mbit, or 1-Gbit SLC small page NAND flash memory, and either:
l
256-Mbit or 512-Mbit SDR (single data rate) LPSDRAM or
l
256-Mbit or 512-Mbit DDR (double data rate) LPSDRAM
The NAND flash memory and LPSDRAM components have separate power supplies and
grounds. They also have separate control, address and input/output signals; this allows
simultaneous access to both devices at any moment. The NAND flash memory and
LPSDRAM components are distinguished by a Chip Enable input, EF, for the NAND flash
memory and a Chip Select, ED, for the LPSDRAM. See Figure 1 and Figure 2 in conjunction
with Table 4 and Table 5 for an overview of the signals associated with each component.
The NANDxxxxMx devices are available with a 1.8 V or 2.6 V voltage supply and are offered
in the following packages as shown in Table 2: Product list:
l
TFBGA107 (10.5 × 13 × 1.2 mm)
l
TFBGA149 (10 × 13.5 × 1.2 mm)
l
TFBGA137 (10.5 × 13 × 1.2 mm)
l
TFBGA152 (14 × 14 × 1.1 mm)
The memories are supplied with all the NAND flash memory bits erased (set to ‘1’).
This datasheet should be read in conjunction with the SLC small page NAND flash memory
and LPSDRAM datasheets.
Table 2.
Product list
Root part number
NAND product
LPSDRAM product
Package
NAND88R3M0
256 Mbits (×8) - 1.8 V
SDR 256 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
NAND99R3M0
512 Mbits (×8) - 1.8 V
SDR 512 Mbits (×16) 1.8 V, 133 MHz
TFBGA149
NAND98R3M0
512 Mbits (×8) - 1.8 V
SDR 256 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
TFBGA149
TFBGA152
NAND99W3M1
512 Mbits (×8) - 2.6 V
SDR 512 Mbits (×32) 1.8 V, 133 MHz
TFBGA137
NAND99R3M1
512 Mbits (×8) - 1.8 V
SDR 512 Mbits (×32) 1.8 V, 133 MHz
LFBGA137
NAND99W3M0
512 Mbits (×8) - 2.6 V
SDR 512 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
NAND98W3M0
512 Mbits (×8) - 2.6 V
SDR 256 Mbits (×16) 1.8 V, 133 MHz
TFBGA107
NANDA9W3M1
1 Gbit (x8) - 2.6 V
SDR 512 Mbits (x32) 1.8 V, 133 MHz
TFBGA 137
NAND99R4M2
512 Mbits (x16) - 1.8 V
DDR 512 Mbits (x16) 1.8 V, 133 MHz
TFBGA 149
NAND99R3M2
512 Mbits (×8) - 1.8 V
DDR 512 Mbits (x16) 1.8 V, 133 MHz
TFBGA107
NAND98W3M1
512 Mbits (×8) - 2.6 V
SDR 256 Mbits (x32) 1.8 V, 133 MHz
TFBGA 137
NAND98R3M1
512 Mbits (×8) - 1.8 V
SDR 256 Mbits (x32) 1.8 V, 133 MHz
TFBGA 137
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參數(shù)描述
NAND99R3M2AZBB5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
NAND99R3M4BZBB5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NAND99R3M4BZBB5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
NAND99R4M2AZBA5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NAND99R4M4BZBA5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
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