參數(shù)資料
型號: NAND99R3M2AZBB5E
廠商: NUMONYX
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA107
封裝: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
文件頁數(shù): 13/33頁
文件大?。?/td> 724K
代理商: NAND99R3M2AZBB5E
Signals description
NANDxxxxMx
2.25
LPSDRAM VDDQD supply voltage
VDDQD provides the power supply to the I/O pins and enables all outputs to be powered
independently of VDDD. VDDQD can be tied to VDDD or can use a separate supply.
It is recommended to power up and power down VDDD and VDDQD together to avoid
conditions that would result in data corruption.
2.26
LPSDRAM VSSD ground
VSSD is the reference for the NAND flash power supply. It must be connected to the system
ground.
2.27
VSSQD ground
VSSQD ground is the reference for the input/output circuitry driven by VDDQD. VSSQD must be
connected to VSSD.
Note:
Each device in a system should have VDDD and VDDQD decoupled with a 0.1 F ceramic
capacitor close to the pin (high-frequency, inherently-low inductance capacitors should be
as close as possible to the package).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND99R3M2AZBB5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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NAND99R3M4BZBB5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
NAND99R4M2AZBA5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
NAND99R4M4BZBA5E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays