參數(shù)資料
型號(hào)： NAND99R3M2AZBB5E
廠商： NUMONYX
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA107
封裝： 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
文件頁(yè)數(shù)： 17/33頁(yè)
文件大小： 724K
代理商： NAND99R3M2AZBB5E
Maximum ratings
NANDxxxxMx
4
Maximum ratings
Stressing the device above the rating listed in Table 6: Absolute maximum ratings may
cause permanent damage to the device. These are stress ratings only; operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect the reliability of the device.
Table 6.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient operating temperature
-30
85
°C
TSTG
Storage temperature
-55
125
°C
VIO
(1)
1.
Minimum voltage may undershoot to -2 V for less than 20 ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2 V for less than 20 ns during transitions on I/O pins.
NAND flash input or output
voltage
1.8 V
-0.6
2.7
V
2.6 V
-0.6
4.6
V
VDDQD
LPSDRAM input or output voltage
-0.3
2.3
V
VDDF
NAND flash supply voltage
1.8 V
-0.6
2.7
V
2.6 V
-0.6
4.6
V
VDDD
LPSDRAM supply voltage
-0.3
2.3
V
LPSDRAM short circuit
output current
IOS
50
mA
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NAND99R3M2AZBB5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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