參數(shù)資料
型號(hào): NAND99R3M2AZBB5E
廠商: NUMONYX
元件分類: 存儲(chǔ)器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA107
封裝: 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107
文件頁(yè)數(shù): 25/33頁(yè)
文件大?。?/td> 724K
代理商: NAND99R3M2AZBB5E
NANDxxxxMx
Ordering information
31/32
6
Ordering information
Note:
Devices are shipped from the factory with the flash memory content bits, in valid blocks,
erased to ’1’. For further information on any aspect of this device, please contact your
nearest Numonyx sales office.
Table 12.
Ordering information scheme
Example:
NAND8
8 R 3 M 0
A
ZBB 5
E
Device type
NAND flash memory
NAND flash density
8 = 256 Mbits
9 = 512 Mbits
A = 1 Gbit
DRAM density
8 = 256 Mbits
9 = 512 Mbits
NAND flash operating voltage
R = 1.7 V to 1.95 V
W = 2.5 V to 3.6 V
NAND bus width
3 = x8
4 = x16
Family identifier
M = 528-byte page NAND flash memory
DRAM options
0 = SDR, x16, 133 MHz
1 = SDR, ×32, 133 MHz
2 = DDR, x16, 133 MHz
Product version
A
B
C
Package
ZBA = TFBGA149, 10 × 13.5 x 1.2 mm
ZBB = TFBGA107 10.5 × 13 x 1.2 mm
ZBC = TFBGA137 10.5 x 13 x 1.2 mm
ZPA = TFBGA152, 14 × 14 x 1.1 mm
Temperature
5 = –30 °C to 85 °C
Option
E = ECOPACK package, standard packing
F = ECOPACK package, tape and reel packing
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NAND99R3M2AZBB5F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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