參數(shù)資料
型號： NAND512R3M0BZBE
廠商： STMICROELECTRONICS
元件分類： 存儲器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA107
封裝： 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-107
文件頁數(shù)： 8/22頁
文件大?。?/td> 200K
代理商： NAND512R3M0BZBE
Maximum rating
NAND256-M, NAND512-M, NAND01G-M
16/22
2
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 5.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature
-30
85
°C
TBIAS
Temperature Under Bias
tbd
°C
TSTG
Storage Temperature
-55
125
°C
VIO
(1)
1. Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O
pins. Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O
pins.
NAND Flash Input or Output
Voltage
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
LPSDRAM Input or Output
Voltage
1.8V device
-0.5
2.6
V
VDDF
NAND Flash Supply Voltage
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
VDDD, VDDQD
LPSDRAM Supply Voltage
1.8V device
-0.5
2.6
V
LPSDRAM Short
Circuit Output
Current
IOS
50
mA
LPSDRAM Power
Dissipation
PD
1.0
W
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