參數(shù)資料
型號(hào)： NAND512R3M0BZBE
廠商： STMICROELECTRONICS
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA107
封裝： 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-107
文件頁(yè)數(shù)： 1/22頁(yè)
文件大小： 200K
代理商： NAND512R3M0BZBE
PRELIMINARY DATA
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
May 2006
Rev 4
1/22
2
NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Feature summary
■
Multi-Chip Packages
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
– 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
■
Supply voltages
–VDDF = 1.7V to 1.95V or 2.5V to 3.6V
–VDDD = VDDQD = 1.7V to 1.9V
■
Electronic Signature
■
ECOPACK packages
■
Temperature range
– -30 to 85°C
Flash Memory
■
NAND Interface
– x8 or x16 bus width
– Multiplexed Address/ Data
■
Page size
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
■
Block size
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
■
Page Read/Program
– Random access: 12s (max)
– Sequential access: 50ns (min)
– Page program time: 200s (typ)
■
Copy Back Program mode
– Fast page copy without external buffering
■
Fast Block Erase
– Block erase time: 2ms (typ)
■
Status Register
■
Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
LPSDRAM
■
Interface: x16 bus width
■
Deep Power Down mode
■
1.8v LVCMOS interface
■
Quad internal Banks controlled by BA0 and
BA1
■
Automatic and controlled Precharge
■
Auto Refresh and Self Refresh
– 8,192 Refresh cycles/64ms
– Programmable Partial Array Self Refresh
– Auto Temperature Compensated Self
Refresh
■
Wrap sequence: sequential/interleave
■
Burst Termination by Burst Stop command and
Precharge command
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
FBGA
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NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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