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參數(shù)資料
| 型號： | NAND02GW4B2AN1T |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 128M X 16 FLASH 3V PROM, 35 ns, PDSO48 |
| 封裝： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 53/57頁 |
| 文件大?。?/td> | 887K |
| 代理商： | NAND02GW4B2AN1T |
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NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
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相關(guān)PDF資料 |
PDF描述 |
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| NAND04GR4B2CN1F | 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND08GW3B2CZL1F | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND04GR3B2DDI6 | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND04GR3B2DN6E | 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| NAND04GR3B2DZL6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND04GR3B2EN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND04GR3B2EN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
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