參數(shù)資料
型號(hào)： NAND02GW4B2AN1T
廠商： NUMONYX
元件分類： PROM
英文描述： 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 33/57頁
文件大?。?/td> 887K
代理商： NAND02GW4B2AN1T
39/57
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment
Conditions
summarized
in
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Table 20. Operating and AC Measurement Conditions
Table 21. Capacitance
Note: 1. TA = 25°C, f = 1 MHz. CIN and CI/O are not 100% tested
2. input/output capacitances double in stacked devices
Table 22. DC Characteristics, 1.8V Devices
Parameter
NAND Flash
Units
Min
Max
Supply Voltage (VDD)
1.8V devices
1.7
1.95
V
3V devices
2.7
3.6
V
Ambient Temperature (TA)
Grade 1
0
70
°C
Grade 6
–40
85
°C
Load Capacitance (CL) (1 TTL GATE and CL)
1.8V devices
30
pF
3V devices (2.7 - 3.6V)
50
pF
Input Pulses Voltages
1.8V devices
0
VDD
V
3V devices
0.4
2.4
V
Input and Output Timing Ref. Voltages
1.8V devices
0.9
V
3V devices
1.5
V
Output Circuit Resistor Rref
8.35
k
Input Rise and Fall Times
5
ns
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
10
pF
CI/O
Input/Output Capacitance(2)
VIL = 0V
10
pF
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
8
15
mA
IDD2
Program
-
8
15
mA
IDD3
Erase
-
8
15
mA
IDD5
Standby Current (CMOS)(1)
E=VDD-0.2,
WP=0/VDD
-
10
50
A
ILI
Input Leakage Current(1)
VIN= 0 to VDDmax
-
±10
A
ILO
Output Leakage Current(1)
VOUT= 0 to VDDmax
-
±10
A
VIH
Input High Voltage
-
VDD-0.4
-
VDD+0.3
V
相關(guān)PDF資料
PDF描述
NAND04GR4B2CN1F 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
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