參數(shù)資料
型號(hào): NAND02GW4B2AN1T
廠商: NUMONYX
元件分類: PROM
英文描述: 128M X 16 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù): 47/57頁(yè)
文件大小: 887K
代理商: NAND02GW4B2AN1T
51/57
NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Data Protection
The ST NAND device is designed to guarantee
Data Protection during Power Transitions.
A VDD detection circuit disables all NAND opera-
tions, if VDD is below the VLKO threshold.
In the VDD range from VLKO to the lower limit of
nominal range, the WP pin should be kept low
(VIL) to guarantee hardware protection during
power transitions as shown in the below figure.
Figure 37. Data Protection
Ai11086
VLKO
VDD
W
Nominal Range
Locked
相關(guān)PDF資料
PDF描述
NAND04GR4B2CN1F 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
NAND08GW3B2CZL1F 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND04GR3B2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND04GR3B2DN6E 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND04GR3B2DZL6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND04GR3B2EN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND04GR3B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel