參數(shù)資料
型號(hào)： MT28F640J3
廠商： Micron Technology, Inc.
英文描述： 64Mb Flash Memory(64Mb閃速存儲(chǔ)器)
中文描述： 64MB Flash記憶體（64兆閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 6/45頁(yè)
文件大?。?/td> 317K
代理商： MT28F640J3
6
64Mb, 32Mb SirusFlash Memory
MT28F640J3_2.p65 – Rev. 1, Pub. 12/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb, 32Mb
SIRUSFLASH MEMORY
PRELIMINARY
It is important to assert RP# during system reset.
After coming out of reset, the system expects to read
from the Flash memory. During block erase, program,
or lock bit configuration mode, automated Flash memo-
ries provide status information when accessed. When
a CPU reset occurs with no Flash memory reset, proper
initialization may not occur because the Flash memory
may be providing status information instead of array
data. Micron Flash memories allow proper initializa-
tion following a system reset through the use of the RP#
input. RP# should be controlled by the same RESET#
signal that resets the system CPU.
READ QUERY
The READ QUERY operation produces block status
information, CFI ID string, system interface informa-
tion, device geometry information, and extended query
information.
READ IDENTIFIER CODES
The READ IDENTIFIER CODES operation produces
the manufacturer code, device code, and the block lock
configuration codes for each block (see Figure 2). The
block lock configuration codes identify locked and un-
locked blocks.
WRITE
Writing commands to the CEL allows reading of de-
vice data, query, identifier codes, and reading and clear-
ing of the status register. In addition, when V
PEN
= V
PENH
,
block erasure, program, and lock bit configuration can
also be performed.
The BLOCK ERASE command requires suitable com-
mand data and an address within the block. The BYTE/
WORD PROGRAM command requires the command
and address of the location to be written to. The CLEAR
BLOCK LOCK BITS command requires the command
and any address within the device. SET BLOCK LOCK
BITS command requires the command and the block to
be locked. The CEL does not occupy an addressable
memory location. It is written to when the device is
enabled and WE# is LOW. The address and data needed
to execute a command are latched on the rising edge of
WE# or the first edge of CEx that disables the device
(see Table 1). Standard microprocessor write timings
are used.
Reserved for Future
Implementation
Manufacturer Code
Device Code
010000h
00FFFFh
000004h
000003h
000002h
000001h
000000h
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Block 63
Block 0
3FFFFFh
3F0003h
3F0002h
3F0000h
3EFFFFh
1EFFFFh
1F0003h
1F0002h
1F0000h
01FFFFh
010003h
010002h
3
6
Block 63 Lock Configuration
Block 0 Lock Configuration
Reserved for Future
Implementation
Block 31 Lock Configuration
(Blocks 32 through 62)
Block 31
Reserved for Future
Implementation
(Blocks 2 through 30)
Block 1
Reserved for Future
Implementation
Block 1 Lock Configuration
Figure 2
Device Identifier Code Memory Map
NOTE:
When obtaining these identifier codes, A0 is not used
in either x8 or x16 modes. Data is always given on the
LOW byte in x16 mode (upper byte contains 00h).
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT28F640J3BS-115 ET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT28F640J3BS-115 ET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤
MT28F640J3BS-115 GMET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
MT28F640J3BS-115 GMET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤
MT28F640J3BS-115 MET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869
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