參數(shù)資料
型號: MT28F640J3
廠商: Micron Technology, Inc.
英文描述: 64Mb Flash Memory(64Mb閃速存儲(chǔ)器)
中文描述: 64MB Flash記憶體(64兆閃速存儲(chǔ)器)
文件頁數(shù): 17/45頁
文件大?。?/td> 317K
代理商: MT28F640J3
17
64Mb, 32Mb SirusFlash Memory
MT28F640J3_2.p65 – Rev. 1, Pub. 12/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb, 32Mb
SIRUSFLASH MEMORY
PRELIMINARY
Table 14
Identifier Codes
CODE
A DDRESS
1
00000h
DA TA
(00) 89
Manufacturer Code
Device Code
·
32Mb
·
64Mb
Block Lock Configuration
·
Block is Unlocked
·
Block is Locked
·
Reserved for Future Use
00001h
00001h
X0002h
2
(00) 16
(00) 17
DQ0 = 0
DQ0 = 1
DQ1–DQ7
NOTE:
1. A0 is not used in either x8 or x16 modes when obtaining the identifier
codes. The lowest-order address line is A1. Data is always presented on the
low byte in x16 mode (upper byte contains 00h).
2. X selects the specific block’s lock configuration code. See Figure 2 for the
device identifier code memory map.
READ IDENTIFIER CODES COMMAND
Writing the READ IDENTIFIER CODES command
initiates the IDENTIFIER CODE operation. Following
the writing of the command, READ cycles from ad-
dresses shown in Figure 2 retrieve the manufacturer,
device, and block lock configuration codes (see Table
14 for identifier code values). Page mode READs are
not supported in this read mode. To terminate the op-
eration, write another valid command. The READ
IDENTIFIER CODES command functions indepen-
dently of the V
PEN
voltage. This command is valid only
when the ISM is off or the device is suspended. See
Table 14 for read identifier codes.
READ STATUS REGISTER COMMAND
The status register may be read at any time by writ-
ing the READ STATUS REGISTER command to deter-
mine the successful completion of programming, block
erasure, or lock bit configuration. After writing this com-
mand, all subsequent READ operations output data
from the status register until another valid command is
written. Page mode READs are not supported in this
read mode. The status register contents are latched on
the falling edge of OE# or the first edge of CEx that
enables the device (see Table 1). To update the status
register latch, OE# must toggle to V
IH
or the device must
be disabled before further READs. The READ STATUS
REGISTER command functions independently of the
V
PEN
voltage. During a program, block erase, set block
lock bits, or clear block lock bits command sequence,
only SR7 is valid until the ISM completes or suspends
the operation. Device I/O pins DQ0–DQ6 and DQ8–
DQ15 are placed in High-Z. When the operation com-
pletes or suspends (check status register bit 7), all con-
tents of the status register are valid during a READ.
相關(guān)PDF資料
PDF描述
MT35212A BELL 212A/CCITT V.22 Modem Filter
MT35212AE BELL 212A/CCITT V.22 Modem Filter
MT35212AP BELL 212A/CCITT V.22 Modem Filter
MT46V32M16TG-8L DOUBLE DATA RATE DDR SDRAM
MT46V64M8TG-75 DOUBLE DATA RATE DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT28F640J3BS-115 ET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤 其它名稱:Q2841869
MT28F640J3BS-115 ET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤
MT28F640J3BS-115 GMET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤 其它名稱:Q2841869
MT28F640J3BS-115 GMET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:FLASH 存儲(chǔ)容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA(7x7) 包裝:托盤
MT28F640J3BS-115 MET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:托盤 其它名稱:Q2841869