參數(shù)資料
型號(hào)： MT28F640J3
廠商： Micron Technology, Inc.
英文描述： 64Mb Flash Memory(64Mb閃速存儲(chǔ)器)
中文描述： 64MB Flash記憶體（64兆閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 33/45頁(yè)
文件大小： 317K
代理商： MT28F640J3
33
64Mb, 32Mb SirusFlash Memory
MT28F640J3_2.p65 – Rev. 1, Pub. 12/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb, 32Mb
SIRUSFLASH MEMORY
PRELIMINARY
DESIGN CONSIDERATIONS
FIVE-LINE OUTPUT CONTROL
Micron provides five control inputs (CE0, CE1, CE2,
OE#, and RP#) to accommodate multiple memory con-
nections in large memory arrays. This control provides
the lowest possible memory power dissipation and en-
sures that data bus contention does not occur.
To efficiently use these control inputs, an address
decoder should enable the device (see Table 1) while
OE# is connected to all memory devices and the
system’s READ# control line. This ensures that only
selected memory devices have active outputs while
deselected memory devices are in standby mode. Dur-
ing system power transitions, RP# should be connected
to the system POWERGOOD signal to prevent unin-
tended writes. POWERGOOD should also toggle dur-
ing system reset.
STS AND BLOCK ERASE, PROGRAM, AND
LOCK BIT CONFIGURATION
POLLING
As an open drain output, STS should be connected
to V
CC
Q by a pull-up resistor to provide a hardware
method of detecting block erase, program, and lock bit
configuration completion. It is recommended that a
2.5K
resistor be used between STS# and V
CC
Q. In de-
fault mode, it transitions LOW after block erase, pro-
gram, or lock bit configuration commands and returns
to High-Z when the ISM has finished executing the
internal algorithm. See the CONFIGURATION com-
mand for alternate configurations of the STS pin. STS
can be connected to an interrupt input of the system
CPU or controller. STS is active at all times. In default
mode, it is also High-Z when the device is in block erase
suspend (with programming inactive), program sus-
pend, or reset/power-down mode.
POWER SUPPLY DECOUPLING
Device decoupling is required for Flash memory
power switching characteristics. There are three sup-
ply current issues to consider: standby current levels,
active current levels, and transient peaks produced by
falling and rising edges of CEx and OE#. Transient cur-
rent magnitudes depend on the device outputs’ ca-
pacitive and inductive loading. Two-line control and
proper decoupling capacitor selection suppresses tran-
sient voltage peaks. Because Micron SirusFlash memory
devices draw their power from three V
CC
pins (these
devices do not include a V
PP
pin), it is recommended
that systems without separate power and ground
planes attach a 0.1μF ceramic capacitor between each
of the device’s three V
CC
pins (this includes V
CC
Q) and
GND. These high-frequency, low-inductance capaci-
tors should be placed as close as possible to package
leads on each Micron SirusFlash memory device. Addi-
tionally, for every eight devices, a 4.7μF electrolytic
capacitor should be placed between V
CC
and GND at
the array’s power supply connection.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT28F640J3BS-115 ET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869
MT28F640J3BS-115 ET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤(pán)
MT28F640J3BS-115 GMET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869
MT28F640J3BS-115 GMET TR 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤(pán)
MT28F640J3BS-115 MET 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869
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