參數(shù)資料
型號: MCIMX507CVM8B
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: SPECIALTY MICROPROCESSOR CIRCUIT, PBGA400
封裝: 17 X 17 MM, 0.5 MM PITCH, ROHS COMPLIANT, PLASTIC, MABGA-400
文件頁數(shù): 46/120頁
文件大?。?/td> 1980K
代理商: MCIMX507CVM8B
Electrical Characteristics
i.MX50 Applications Processors for Consumer Products, Rev. 0
Freescale Semiconductor
31
4.3.4
Low Power DDR1 I/O DC Parameters
The LPDDR1 interface fully complies with JEDEC standard release April, 2008. The parameters in
Table 18 are guaranteed per the operating ranges in Table 9, unless otherwise noted.
4.3.5
Low Voltage I/O (LVIO) DC Parameters
The parameters in Table 19 are guaranteed per the operating ranges in Table 9, unless otherwise noted.
Table 18. LPDDR1 Mode DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
MIN
TYP
MAX
Units
High-level output voltage
Voh
Ioh=-0.1mA
0.9*ovdd
V
Low-level output voltage
Vol
Iol=0.1mA
0.1*ovdd
V
DC input high voltage (data pins)
Vihd(dc)
0.7*ovdd
ovdd+0.3
V
DC input low voltage (data pins)
Vild(dc)
-0.3
0.3*ovdd
V
DC input voltage1 (clk pins)
1 Vin(dc) specifies the allowable dc excursion of each differential input.
Vin(dc)
-0.3
ovdd+0.3
V
DC input differential voltage2
2 Vid(dc) specifies the input differential voltage |Vtr-Vcp| required for switching, where Vtr is the “pure” input level and Vcp
is the “complementary” input level. the minimum value is equal to Vih(dc) -Vil(dc).
Vid(dc)
0.4*ovdd
ovdd+0.6
V
Input current3 (no pull-up/down)
3 Typ condition: typ model, 1.8 V, and 25 °C. Max condition: BCS model, 1.9 V, and 105 °C. Min condition: WCS model, 1.7
V, and -20 °C.
Iin
VI = 0
VI=ovdd
—0.07
2
5
360
nA
Tri-state I/O supply current3
Icc-ovdd
VI = ovdd or 0
2.3
480
nA
Tri-state 2.5V predrivers supply
current3
Icc-vdd2
p5
VI = ovdd or 0
5.3
680
nA
Tri-state core supply current3
Icc-vddi
VI = ovdd or 0
3.1
720
nA
Table 19. LVIO DC Electrical Characteristics
DC Electrical Characteristics
Symbol
Test Conditions
MIN
Typ
MAX
Units
High-level output voltage
Voh
Ioh=-1mA
Ioh=spec’ed Drive
OVDD-0.15
0.8*OVDD
——
V
Low-level output voltage
Vol
Iol=1mA
Iol=specified Drive
0.15
0.2*OVDD
V
High-level output current
I
Ioh
Voh=0.8*OVDD
Low Drive
Medium Drive
High Drive
Max Drive
-2.1
-4.2
-6.3
-8.4
——
mA
Low-level output current
I
Iol
Vol=0.2*OVDD
Low Drive
Medium Drive
High Drive
Max Drive
2.1
4.2
6.3
8.4
——
mA
High-Level DC input voltage 1
VIH
0.7*OVDD
OVDD
V
Low-Level DC input voltage
VIL
0V
0.3*OVDD
V
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