參數(shù)資料
型號： M5M29F25611VP
廠商： Mitsubishi Electric Corporation
英文描述： MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
中文描述： 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存
文件頁數(shù)： 7/36頁
文件大?。?/td> 499K
代理商： M5M29F25611VP
Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Status Register Read
The status returns to the register read mode from Standby mode ,when
mode, DQ pins output the same operation status as in the status data polling defined in the function description, table 1
(page 34).
and
is
V
IL
. In the status register read
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and device
identifier code is selected with
V
IL
and
V
IH
, respectively.
Data Recovery Read
When programming was error, the program data can be read. When additional programming (Program(1),(3),(4))was error,
the data compounded of the program data and the original data in the sector of address SA can be read. Output data is not
valid after the number of SA pulse exceeds 2112. The mode turns back to the Standby mode at any time when
(See timing waveform in page 31)
is
V
IH
.
Data Recovery Write
When programming into a sector of address SA was an error,the program data can be re-written automatically by selecting
the other sector SA'.In this Case,top address [SA13] of sector of address SA' must be the same as SA.Since the data
recovery write mode utilizes program(4),rewritten sector of address SA' needs no sector erase before rewritten.After the data
recovery write mode starts,the program completion can be checked through R/
signal and the status data polling.
7
Serial read(1), (Without CA)
Program(1), (Without CA)
Program(2)
Program(4), (Without CA)
Serial read(1), (With CA)
Program(1), (With CA)
Program(4), (With CA)
Serial read(2)
Program(3)
Sector
Address
16383
Memory Array
0
2111
0
Register
16383
0
0
2111
16383
0
0
Sector
Address
Memory Array
Register
Column
address
Memory Array
Sector
Address
2111
Register
2048
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相關(guān)代理商/技術(shù)參數(shù)
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M5M29FB800FP 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800FP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800FP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB800RV-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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