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參數(shù)資料
| 型號(hào)： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 21/36頁 |
| 文件大?。?/td> | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Erase and Status Data Polling Timing Waveforms (Sector Erase)
Note : 1. Any commands, including reset command FFH, cannot be input while R/
2. The status returns to the Standby or the Output disable after R/
outputs a
V
OL
.
returns to HighZ.
21
SC
DQ0-7
R/
t
CES
t
OEWS
t
CWC
t
CWC
t
CWC
t
WPH
t
WPH
t
WPH
t
WP
t
WP
t
WP
t
WP
t
CDS
t
CDH
t
CEH
t
OEPS
t
CE
t
OE
t
RDY
t
ASE
t
CDS
t
CDS
t
CDH
t
SCHW
t
CDH
t
SCS
t
DS
t
DH
t
AS
t
AH
t
AS
t
AH
t
DS
t
DH
t
DF
t
DB
t
RP
20H
SA(1)
SA(2)
B0H
DQ7=V
OL
DQ7=V
OH
HighZ
(note1)
(note2)
HighZ
t
COS
t
CDS
t
DF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FB800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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