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參數(shù)資料
| 型號： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 11/36頁 |
| 文件大?。?/td> | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Program data
input
Status Transition
11
Note 1: (01H)/(12H) Data Recovery Read/Write can be used only for Program(1),(2),(3),(4) Errors.
2: When Reset is done by
CE
or FFH, Error Status Flag is cleared.
3: When Error Standby, Icc3 level is current.
4: When Program(3) mode, input data is PD2048
~
PD2111.
Standby
Deep
Standby
Power off
Vcc
Read (1), (2)
setup
00H / F0H
SA(1), SA(2)
Sector address
input
, SC
Read(1), (2)
90H
ID Read set up
,
ID Read
BUSY
Status
register
read
Status register clear 50H
Output
disable
FFH
Column address
input
SC
FFH
Sector Erase
set up
20H
SA(1), SA(2)
Erase start
FFH
Erase finish
Sector address
input
B0H
Program (2),(3)
set up
1FH/
0FH
SA(1)
SA(2)
FFH
Sector address
input
40H
PD0 ~ PD2111
Program or
Erase Error
Program (1),(4)
set up
10H/
11H
SA(1)
SA(2)
Program
start
FFH
Program finish
Sector address
input
40H
PD0 ~ PD2111
Program data
input
Column address
input
SC,
PD(m)~
PD(m+j)
CA(1)
CA(2)
SC,
SC,
Program
start
Status
register
read
Status
register
read
Status
register
read
Program finish
01H
,SC
Data
Recovery Read
FFH
Data
Recovery Read
set up
ERROR
Status register read
Error
Standby
(note3)
Error
Output
disable
CA(1)
CA(2)
CA(1)',CA(2)'
CA(1)',CA(2)'
(note1)
(note2)
(note2)
(note4)
Data
Recovery Write
set up
Sector address
input
SA(1)
SA(2)
40H
FFH
(note1)
12H
相關(guān)PDF資料 |
PDF描述 |
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| M5M29FB800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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