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參數(shù)資料
| 型號： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 1/36頁 |
| 文件大?。?/td> | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
DESCRIPTION
The MITSUBISHI M5M29F25611 is a CMOS Flash Memory
with AND type multi-level memory cells.
It has fully automatic programming and erase capabilities
with a single 3.3V power supply.
The functions are controlled by simple external commands.
To fit the I/O card applications, the unit of programming and
erase is as small as (2048+64) bytes.
Available sectors of M5M29F25611 are more than
16,057(98% of all sector address) and less than 16,384
sectors.
FEATURES
On-board single power supply(Vcc) :
Vcc=3.0V to 3.6V
Organization
AND Flash Memory :
(2048+64)bytes x (More than 16,057 sectors)
Data register : (2048+64)bytes
Multi-level memory cell:
2bit / per memory cell.
Automatic programming :
Sector program time : 2.5 ms typ.
System bus free
Address,data latch function
Internal automatic program verify function
Status data polling function
Automatic erase :
Single sector erase time : 1.0 ms typ.
System bus free
Internal automatic erase verify function
Status data polling function
Erase mode :
Single sector erase ((2048+64)byte unit)
Fast access time :
Serial read First access time : 50μs max.
Serial access time : 50ns max.
Low power dissipation :
I
CC2
= 30mA typ. / 50mA max. (Read)
I
SB2
= 30μA typ. / 50μA max. (Standby)
I
CC3
= 20mA typ. / 40mA max. (Program)
I
CC4
= 20mA typ. / 40mA max. (Erase)
I
SB3
= 1μA typ. / 10μA max. (Deep standby)
Package : 48pin-TSOP(I) (12.0 x 20.0mm2)
PIN CONFIGURATION(TOP VIEW)
1
Pin Description
Note1:All Vcc and GND pins should be connected to
a common power supply and a ground, respectively.
Note2:Pin should not be connected to anything.
Pin name
DQ0-7
Vcc note1
GND note1
R/
SC
NC
Input / Output
Chip enable
Output enable
Write enable
Command data enable
Power supply
Ground
Ready /
Reset
Serial clock
No connect
Don't Use
DU note2
Function
Outline 48P3R-B
Vcc
DQ0
DQ1
DQ2
DQ3
GND
GND
Vcc
DQ4
DQ5
DQ6
DQ7
SC
GND
GND
M5M29F25611VP
NC
NC
NC
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
GND
GND
NC
NC
Vcc
NC
NC
NC
NC
NC
NC
NC
NC
GND
R/
NC
DU
NC
Vcc
GND
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| M5M29FB800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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