- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384640 > M5M29F25611VP (Mitsubishi Electric Corporation) MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 31/36頁 |
| 文件大?。?/td> | 499K |
| 代理商： | M5M29F25611VP |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁當(dāng)前第31頁第32頁第33頁第34頁第35頁第36頁
Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
31
Data Recovery Read Timing Waveforms
Note 1. The status returns to the Standby at the rising edge of
2. Output data is not valid after the number of the SC pulse exceeds 2112 and 64 in the Data Recovery Read mode.
3. The status can return to the Ready after the command FFH is input.
.
SC
DQ0-7
R/
t
CES
t
OEWS
t
WP
t
CDH
t
CDS
t
SCS
t
RP
t
DS
t
DH
01H
t
WSDR
t
OES
t
SCC
t
SCC
t
OEL
t
SP
t
SPL
t
SAC
t
SAC
t
SAC
t
SAC
t
DF
t
SH
t
SH
t
SOH
FFH
t
DS
t
DH
t
CDS
t
CDH
t
WP
t
CPH
t
CEH
HighZ
(note2)
D0
out
D1
out
D2111
out
(note2)
(note1)
(note3)
t
OER
t
CDOS
t
COH
t
CWHR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FB800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。