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| 型號(hào)： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁(yè)數(shù)： | 5/36頁(yè) |
| 文件大小： | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Command Definition
5
(note 1,2)
Notes : 1. Commands, sector address and column address are latched at rising edge of
Program data is latched at rising edge of SC pulses.
2. The chip is in the read status register mode when
3. Refer to the command read and write mode in mode selection table (P.4).
4. SA(1)=Sector address (SA0 - SA7), SA(2)=Sector address (SA8 - SA13).
5. CA(1)=Column address (CA0 - CA7), CA(2)=Column address (CA8 - CA11).(0
≤
CA11 - CA0
≤
83FH)
6. The variable h is the input number of times of set of CA(1) and CA(2).(1
≤
h
≤
2048+64)
Set of CA(1) and CA(2) can be input not only one time but free times.
7. By using program(1) and (3), data can additionally be programmed for each sector before erase.
8. ID=Identifier code; Manufacturer code (1CH), Device code (6CH).
9. The manufacturer identifier code is output when
is high.
10. Before program (2) operations, data in the programmed sector must be erased.
11. No commands can be written during auto program and erase (when the R/
12. The fourth cycle or sixth cycle of the auto program comes after the program data input is complete.
pulses.
is set to
V
IHR
first time after the power up.
is low and the device identifier code is output when
pin outputs a
V
OL
).
Auto Program
Auto Erase
Data Recovery Read
Read identifier codes
Serial read(2)
Serial read(1)
First
Bus
cycles
3
3+2h(note6)
3
1
1
4
4
4+2h(note6)
4
4
4
4+2h(note6)
Clear status register
Data Recovery Write
Second cycle
in
out
1
1
4
00H
00H
F0H
90H
01H
20H
10H
10H
1FH
0FH
11H
FFH
50H
12H
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
Recovery Data
-
-
-
-
-
Operation
mode (note 3)
ID (note8,9)
Data
in
Data
Operation
mode
Write
Write
Write
Reset
Program (4)
Without CA
(note 7)
With CA
(note 7)
Program (3) (control bytes)
(note 7)
Program (2)
(note 10)
Program (1)
Without CA
(note 7)
With CA
(note 7)
Single sector
Without CA
With CA
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
11H
Read
Write
Read
Write
Write
Write
-
Write
Write
Write
Write
Write
Write
Command
Serial read(2)
Auto Erase
Serial read(1)
Third cycle
Bus
cycles
3
3+2h(note6)
3
4
Fourth cycle
Operation
mode
Data
in
Operation
mode
Without CA
With CA
Write
Write
Write
Write
Write
Auto Program
4
4+2h(note6)
4
4
4
4+2h(note6)
4
Program (4)
Without CA
(note 7)
With CA
(note 7)
Program (3) (control bytes)
(note 7)
Program (2)
(note 10)
Program (1)
Without CA
(note 7)
With CA
(note 7)
Single sector
Write
Write
Write
Write
Write
Write
Write
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
CA(1) (note5)
-
Write
Write
Write
Write
Write
Write
Write
Write
B0H (note11)
40H (note11,12)
CA(1) (note5)
40H (note11,12)
40H (note11,12)
CA(1) (note5)
40H (note11,12)
40H (note11,12)
Command
Serial read(1)
Auto Program
Fifth cycle
Bus
cycles
3+2h(note6)
4+2h(note6)
4+2h(note6)
Sixth cycle
Operation
mode
Data
in
Operation
mode
With CA
Program (1)
Program (4)
Write
Write
Write
Write
Write
With CA
(note 7)
With CA
(note 7)
CA(2) (note5)
CA(2) (note5)
CA(2) (note5)
40H (note11,12)
40H (note11,12)
Command
Write
-
-
-
-
Data Recovery Write
-
-
-
-
-
-
-
-
-
-
-
-
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
Data
in
Data
in
-
-
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| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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