參數(shù)資料
型號(hào)： M5M29F25611VP
廠(chǎng)商： Mitsubishi Electric Corporation
英文描述： MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
中文描述： 其他部門(mén)以外16057（271299072的BITS）3.3的CMOS只串行讀閃存
文件頁(yè)數(shù)： 25/36頁(yè)
文件大?。?/td> 499K
代理商： M5M29F25611VP
Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Program(2) and Status Data Polling Timing Waveforms
Notes : 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while R/
3. The status returns to the Standby or the Output disable after R/
4. By using program(2), the programmed data of each sector must be erased before programming next data.
is
V
OL
.
returns to HighZ.
25
SC
DQ0-7
R/
t
CES
t
OEWS
t
CWC
t
CWC
t
WPH
t
WPH
t
WP
t
WP
t
WP
t
CDS
t
CDS
t
CDH
t
CDH
t
SCC
t
SPL
t
SCS
t
SP
t
SP
t
SW
t
WP
t
CDH
t
SCHW
t
CEH
t
CE
t
RDY
t
OEPS
t
OE
t
ASP(2)
t
DF
t
DB
t
RP
t
DS
t
DH
t
AS
t
AH
t
AS
t
AH
t
SDS
t
SDH
t
DS
t
DH
1FH
SA(1)
SA(2)
PD0
PD1
PD2111
40H
DQ7=V
OL
DQ7=V
OH
HighZ
(note2)
(note3)
HighZ
(note1)
t
COS
t
CDS
t
CDSS
t
DF
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M29FB800FP 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800FP-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800FP-12 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800RV-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
M5M29FB800RV-12 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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