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參數(shù)資料
| 型號： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 3/36頁 |
| 文件大小： | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
3
Memory Map & Address
2048
Bytes
2048
Bytes
2048
Bytes
64
Bytes
64
Bytes
64
Bytes
3FFFH
3FFEH
3FFDH
2048
Bytes
2048
Bytes
2048
Bytes
64
Bytes
64
Bytes
64
Bytes
0002H
0001H
0000H
800H
83FH
(2048+ 64)
Bytes
Note 1: Some failed sectors may exist in the device.
The failed sectors can be recognized by reading the sector valid data written in a
part of the column address 820H - 825H. The sector valid data must be read and
kept outside of the sector before the sector erase.
When the sector is programmed, the sector valid data should be written back to
the sector.
2: An X means “Don’t care”. The pin level can be set to either
V
IL
or
V
IH
, as shown
on page 12.
Sector Address.
Column Address
Control Bytes
000H
SA(1) :
First Cycle
SA(2) :
Second Cycle
Column address
CA(1) :
First Cycle
CA(2) :
Second Cycle
DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
SA0
SA8
SA9
SA10
SA11
CA3
CA11
CA8
SA1
CA9
SA2
CA10
SA3
SA4
SA12
CA4
X
CA0
SA5
SA13
CA5
X
SA6
X
CA6
X
SA7
X
CA7
X
Sector address
(Note2)
CA1 CA2
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| M5M29FB800FP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
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| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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