參數資料
型號： M5M29F25611VP
廠商： Mitsubishi Electric Corporation
英文描述： MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
中文描述： 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存
文件頁數： 19/36頁
文件大?。?/td> 499K
代理商： M5M29F25611VP
Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Test Conditions
Input pulse levels : 0.4V/2.4V
Input pulse levels for
RES
: 0.2V/Vcc - 0.2V
Input rise and fall times :
≤
5ns
Output load : 1 TTL gate + 100pF
(Including scope and jig.)
Reference levels for measuring timing : 0.8V, 1.8V
Limits
Typ
-
Min
120
Max
-
Symbol
Test condition
Unit
Parameter
t
CWC
t
SCC
t
CES
t
CEH
t
WP
t
WPH
t
AS
t
AH
t
DS
t
DH
t
OEWS
Write cycle time
Serial clock cycle time
setup time
hold time
Write pulse width
Write pulse high time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
-
-
-
-
-
-
50
0
0
60
40
50
50
10
10
Address setup time
Address hold time
Data setup time
Data hold time
setup time before command write
setup time before status polling
setup time before read
ms
ms
ms
ms
ms
0
t
OEPS
t
OER
-
-
-
-
-
-
-
-
-
-
-
-
40
250
t
DB
t
DBR
t
ASE
t
ASP(1)
t
ASP(2)
t
ASP(3)
-
-
-
-
-
3.0
2.5
3.0
3.5
3.5
40
40
40
40
40
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
-
-
-
-
-
-
-
-
-
40
200
20
20
0
30
50
20
-
-
-
1
t
SP
t
SPL
t
SDS
t
SDH
t
SW
t
SCS
t
SCHW
t
CE
t
OE
t
DF 1)
t
RP
t
WSD
t
RBSY
t
CPH
= V
IL
0
120
60
-
-
-
-
-
-
-
-
-
-
-
-
19
t
ASP(4)
t
ASRW
Time to device busy
Time to device busy on Read Mode
Auto erase time
Auto program time (1)
Auto program time (2)
Auto program time (3)
Auto program time (4)
Data Recovery Write time
to SC delay time
Busy Time on Read Mode
pulse high time
SC pulse width
SC pulse low time
Data setup time for SC
Data hold time for SC
SC setup for
SC setup for
SC hold time for
to output delay
to output delay
high to output float
to
setup time
μs
μs
-
-
50
-
-
ms
-
1.0
10
ns
μs
-
-
150
-
-
Notes : 1. tDF is a time after which the DQ pins become open.
AC Characteristics (for Erase,program,ID read,status register read , data recovery read and data recovery write.)
(Vcc =3.0V to 3.6V, Ta = 0 to +70°C)
1
t
WSDR
to SC delay time on Recovery Read Mode
μs
-
2
-
45
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