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參數(shù)資料
| 型號： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 20/36頁 |
| 文件大?。?/td> | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Limits
Typ
Min
0
Max
-
Symbol
Test condition
Unit
parameter
t
CDS
t
CDH
t
CDSS
t
CDSH
t
RDY
t
CDOH
setup time for
hold time for
setup time for SC
hold time for SC
Next cycle ready time
to
ns
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
0
-
-
-
-
20
1.5
30
0
50
0
0
50
100
t
CDAC
t
CDF
t
COS
t
COH
t
CDOS
t
OES
to output delay
to output invalid
setup time for
hold time for
to
setup time for SC
hold time
20
-
-
-
-
-
-
-
-
-
-
-
-
0
-
t
OEL
t
SAC
t
SH
t
RS
t
CWH
-
-
20
setup time
low to output low-z
SC to output delay
SC to output hold
R/
setup for SC
hold time for
hold time for
hold time for
ns
ns
μs
μs
μs
-
-
-
50
-
ns
0
40
200
15
-
-
Test Conditions
Input pulse levels : 0.4V/2.4V
Input pulse levels for
RES
: 0.2V/Vcc - 0.2V
Input rise and fall times :
≤
5ns
Output load : 1 TTL gate + 100pF
(Including scope and jig.)
Reference levels for measuring timing : 0.8V, 1.8V
AC Characteristics (for Erase,program,ID read,status register read , data recovery read and data recovery write.)
(Vcc =3.0V to 3.6V, Ta = 0 to +70°C)
t
CWHR
t
WWH
-
-
1
2
-
-
1
on Recovery Read Mode
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| M5M29FB800FP-12 | 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
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| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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