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參數(shù)資料
| 型號： | M5M29F25611VP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| 中文描述： | 其他部門以外16057（271299072的BITS）3.3的CMOS只串行讀閃存 |
| 文件頁數(shù)： | 18/36頁 |
| 文件大小： | 499K |
| 代理商： | M5M29F25611VP |
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Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Limits
Typ
-
-
0.3
Min
-
Max
2
2
1
Symbol
Test conditions
Unit
Parameter
DC Characteristics (Vcc = 3.0V to 3.6V , Ta = 0 to +70°C )
I
LI
I
LO
I
SB1
I
SB2
I
SB3
I
CC3
I
CC4
V
IL
V
IH
V
OL
V
OH
= V
IH
= V
CC
± 0.2V
= V
CC
± 0.2V
= GND ± 0.2V
In programming
In erase
I
OL
= 2mA
I
OH
= -2mA
-
-
-
-
-
-
-
-
-
-
50
10
40
40
20
0.8
V
CC
+ 0.3 2)
0.4
-
30
1
-0.3
2.0
-
1)
μA
μA
mA
μA
μA
mA
mA
V
V
V
V
Erase and Programming Operations
Notes : 1.
V
IL
min = -0.6V for pulse width
≤
20ns.
2. If
V
IH
is over the specified maximum value, the Erase and Programming operations are not guaranteed.
2.4
Input leakage current
Output leakage current
Standby Vcc current
Deep Standby Vcc current
Input high voltage
Output low voltage
Output high voltage
Operating Vcc current
20
18
GND
≤
V
OUT
≤
V
CC
GND
≤
V
IN
≤
V
CC
Input low voltage
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| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800FP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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