參數(shù)資料
型號(hào)： M5M29F25611VP
廠商： Mitsubishi Electric Corporation
英文描述： MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
中文描述： 其他部門(mén)以外16057（271299072的BITS）3.3的CMOS只串行讀閃存
文件頁(yè)數(shù)： 12/36頁(yè)
文件大?。?/td> 499K
代理商： M5M29F25611VP
Rev.2.3.1
2001.2.2
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
M5M29F25611VP
MITSUBISHI LSIs
Absolute Maximum Ratings
Notes : 1. V
IN
, V
OUT
= -2.0V for pulse width
≤
20ns
2. Device storage temperature range before programming.
Limits
Typ
-
-
Min
-
Max
6
12
Symbol
Test conditions
Unit
Parameter
Capacitance (Ta = 25°C , f = 1MHz)
C
in
C
out
Input capacitance
Output capacitance
pF
pF
-
Ta = 25°C, f = 1MHz, V
IN
= V
OUT
= 0V
Read Operation
DC Characteristics ( Vcc = 3.0V to 3.6V , Ta = 0 to +70
°C)
Notes : 1.
V
IL
min = -1.0V for pulse width
≤
50ns.
V
IL
min = -2.0V for pulse width
≤
20ns.
2.
V
IH
max = Vcc + 1.5V for pulse width
≤
20ns. If
V
IH
is over the specified maximum value,
the read operations are not guaranteed.
12
Symbol
V
IN
, V
OUT
V
cc
T
opr
T
stg
T
bias
Ratings
-0.6 to +7
-0.6 to +7
0 to +70
-65 to +125
-10 to +80
Unit
V
V
°C
Parameter
Test conditions
°C
With respect to GND
All input and output voltages
Vcc voltage
Operating temperature range
Storage temperature range 2)
Storage temperature under bias
Limits
Typ
-
-
Min
-
Max
Symbol
Test conditions
Unit
Parameter
I
LI
I
LO
I
SB1
I
SB2
I
SB3
I
CC1
I
CC2
V
IL
V
IH
V
ILR
V
IHR
V
OL
V
OH
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
= V
IH
= V
CC
± 0.2V
= V
CC
± 0.2V
= GND ± 0.2V
I
OUT
= 0mA, f = 0.2MHz
I
OUT
= 0mA, f = 20MHz
-
-
-
-
-
-
2
2
1
50
10
25
50
0.8
0.3
30
1
μA
μA
mA
μA
μA
I
OL
= 2mA
I
OH
= -2mA
-
-
-
-
-
-
-
-
V
CC
+ 0.3 2)
0.2
V
CC
+ 0.2
0.4
30
V
CC
- 0.2
-0.3
2.0
-0.2
1)
2.4
mA
mA
V
V
V
V
V
V
Input leakage current
Output leakage current
Deep Standby Vcc current
Operating Vcc current
Output low voltage
Output high voltage
Input low voltage(
Input high voltage(
pin)
pin)
Input low voltage
Input high voltage
Standby Vcc current
20
°C
1)
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