參數(shù)資料
型號： M58WR064HU70ZB6U
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝： 7.70 X 9 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44
文件頁數(shù)： 32/117頁
文件大?。?/td> 2300K
代理商： M58WR064HU70ZB6U
M58WR064HU M58WR064HL
Command interface - Standard commands
21/117
5
Command interface - Standard commands
The following commands are the basic commands used to read, write to and configure the
device. Refer to Table 5: Standard commands, in conjunction with the following text
descriptions.
5.1
Read Array command
The Read Array command returns the addressed bank to Read Array mode. One Bus Write
cycle is required to issue the Read Array command and return the addressed bank to Read
Array mode. Subsequent read operations will read the addressed location and output the
data. A Read Array command can be issued in one bank while programming or erasing in
another bank. However if a Read Array command is issued to a bank currently executing a
Program or Erase operation the command will be executed but the output data is not
guaranteed.
5.2
Read Status Register command
The Status Register indicates when a Program or Erase operation is complete and the
success or failure of operation itself. Issue a Read Status Register command to read the
Status Register content. The Read Status Register command can be issued at any time,
even during Program or Erase operations.
The following read operations output the content of the Status Register of the addressed
bank. The Status Register is latched on the falling edge of E or G signals, and can be read
until E or G returns to VIH. Either E or G must be toggled to update the latched data. See
Table 8 for the description of the Status Register Bits. This mode supports asynchronous or
single synchronous reads only.
5.3
Read Electronic Signature command
The Read Electronic Signature command reads the Manufacturer and Device Codes, the
Block Locking Status, the Protection Register, and the Configuration Register.
The Read Electronic Signature command consists of one write cycle to an address within
one of the banks. A subsequent Read operation in the same bank will output the
Manufacturer Code, the Device Code, the protection Status of the blocks in the targeted
bank, the Protection Register, or the Configuration Register (see Table 6).
Dual operations between the Parameter bank and the Electronic Signature location are not
If a Read Electronic Signature command is issued in a bank that is executing a Program or
Erase operation the bank will go into Read Electronic Signature mode, subsequent Bus
Read cycles will output the Electronic Signature data and the Program/Erase controller will
continue to program or erase in the background. This mode supports asynchronous or
single synchronous reads only, it does not support synchronous burst reads.
相關PDF資料
PDF描述
M59DR032F100N1T 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
M5F7924 24 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7920 20 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7918 18 V FIXED NEGATIVE REGULATOR, PSFM3
M5F7915 15 V FIXED NEGATIVE REGULATOR, PSFM3
相關代理商/技術參數(shù)
參數(shù)描述
M58WR064KB70ZB6E 制造商:Micron Technology Inc 功能描述:WIRELESS FLASH VFBGA 7.7X9.0X1.0 56 8X7 0.75 - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB70ZB6F 制造商:Micron Technology Inc 功能描述:FLASH 28F640W18TD 60 VF-PBGA56 SB48 EX - Tape and Reel
M58WR064KB70ZB6F TR 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB7AZB6E 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 64MBIT 70NS 56VFBGA
M58WR064KB7AZB6F 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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